LPCVD Nitride

THIN FILM DIELECTRIC, LPCVD PROCESSES: 

LPCVD (Low Pressure Chemically Vapor Deposition) are important films, deposited on both sides of the substrate, provide excellent conformal coating, high breakdown and dielectric isolation used in Semiconductor, Bio-Medical, MEMS and many more applications.

LPCVD Nitride, Stoichiometric    500A-3KA +/-5%    (R.I. 2.0 +/-0.2)                Deposition Temperature = 740 Degree C

LPCVD Amorphous Silicon            200A-2KA +/-5%    Deposition Temperature = 540 Degree C

LPCVD Undoped Polysilicon        200A-10KA +/-5%  Deposition Temperature = 640 Degree C

WIWNU:  Wafer-within-Wafer Non-Uniformity +/-5% @ Range