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Tech Process Capabilities
| THERMAL OXIDE PROCESS |
3 & 4” |
5” |
6” |
8” |
12” |
Thermal Oxide  500 - 20K Angstroms
2K Å – Target Thickness = ±10% |
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 Thermal Oxide Datasheet |
Target Tolerance = ±5% WIWNU = ±5% @ Range / Typical Lead-Time: 3-5 Working Days
±10% Target Thickness Tolerance on all Recycle and Reclaim Grade Wafers |
| LPCVD PROCESS |
3 & 4” |
5” |
6” |
8” |
12” |
| LPCVD Silicon Nitride 500 - 3K Angstroms |
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| Amorphous Silicon 200A - 2K Angstroms |
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| Undoped PolySilicon 200A - 2K Angstroms |
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| LPCVD Datasheet |
| Target Thickness Tolerance = ±7% WIWNU = ±5% @ Range / Lead-Time: 5-7 Working Days |
| Annealing 900º - 1050º / 1 Hour Nitrogen Only |
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| PECVD PROCESS: Plasma Enhanced Chemical Vapor Deposition |
4”
Below 4” call for quote |
5” |
6” |
8” |
12” |
| Plasma Enhanced TEOS 400 - 80K Angstroms |
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Call |
| Plasma Oxide 400 - 80K Angstroms |
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Call |
| Silicon-Carbide 400 - 15K Angstroms |
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Call |
| PECVD Amorphous Silicon 500 - 50K Angstroms |
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Call |
| Plasma Nitride 400 - 15K Angstroms |
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Call |
| Oxy-Nitride 400 - 20K Angstroms |
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Call |
PECVD TEOS Plasma Oxide SiC Datasheet
PECVD Amorphous Si Ni ONi Datasheet
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| Target Thickness Tolerance = ±5% WIWNU = ±5% @ Range / Lead-Time: 5-10 Working Days |
Top ˆ
| WAFER STRIP/CLEAN PROCESS |
4” |
5” |
6” |
8” |
12” |
SRD - Pre-Clean
DI Water / Spin Rinse Dry |
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RCA / SRD Clean
SC1-SC2 SRD |
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| HF Last Process |
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| Lead-Time: 3-5 Working Days |
| Wet Strip Oxide w/ RCA - SRD Clean |
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| Wet Strip Metals, Patterns, Poly w/ RCA - SRD Clean |
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Cassette Integrity: None Maintained
Contamination: Prior to processing order, Noel Tech must be notified of wafers with existing Photo Resist or other films. |
| Lead-Time: 3-5 Working Days |
| POLISHING PROCESS |
4” |
5” |
6” |
8” |
12” |
Single Side Polish RCA/SRD Clean Included
Minimum Removal 5µm |
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Double Side Polish RCA/SRD Clean Included
Minimum Removal 5µm |
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| Lead-Time: TBD on volume / Particle Guarantees Available |
| ADDITIONAL SERVICES |
4” |
5” |
6” |
8” |
12” |
| 200mm Surfscan Service KLA 6200 |
N/A |
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N/A |
300mm Surfscan Service Nanophotonics Reflex from Germany / Measures from .14 - 2µm
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N/A |
N/A |
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Film Mapping Film Metrics F50
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Elipsometer Gaertner
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Bow/Warp Hologenix
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N/A |
N/A |
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N/A |
| Lead-Time: 2-4 Working Days |
Top ˆ
| PHOTO-PATTERNING / PHOTOLITHOGRAPHY |
4” |
6” |
8” |
12” |
I-Line Proximity Printing (1:1)
Minimum Line width: 4.0µm
Resist Thickness: 1.0um-3.0µm*
*Thick Resist patterning 5.0µm + is available / CALL FOR QUOTE |
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Checker board, pads, scribe lines and other “large” patterns
50µm+ |
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.4µm I-Line Stepper Lithography (4x reduction)
Resist Thickness: .85µm-1.5µm |
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N/A |
1.0µm+ I-Line Stepper Lithography (4x reduction)
Resist Thickness: .85µm-1.5µm |
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N/A |
| Lead-Time: 3-5 Working Days |
| PLASMA ETCH / WET ETCH / WET STRIP |
4” |
6” |
8” |
12” |
8:1 BOE Wet Oxide Etch on patterned wafers
Minimum Line width: 1.5µm
Includes wet-chemical resist strip and line-width measurement |
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Wet Chemical Al. Etch on patterned wafers
Minimum Line width: 3.0µm
Includes wet-chemical resist strip and line-width measurement |
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RIE Etch on patterned wafers (Fluorine based Chemistry)
Includes: Oxide, Polysi, a-Si, Nitride, W, TiN films / CALL FOR QUOTE |
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| Plasma Ash Removal of Photoresist O2 Plasma Ash |
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Top ˆ
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